1673-159X

CN 51-1686/N

La3+掺杂BaAl2Si2O8陶瓷的结构及微波介电性能

Structure and Microwave Dielectric Properties of La3+ Doped BaAl2Si2O8 Ceramics

  • 摘要: 采用传统固相反应合成Ba1-xLaxAl2Si2O8(x=0, 0.005, 0.01, 0.015, 0.02),探讨不同La3+取代量对Ba1-xLaxAl2Si2O8(BAS)陶瓷晶体结构和微波介电性能的影响,根据第一性原理计算讨论离子的取代位置,比较不同位置的形成能。结果表明:La3+最有可能取代Ba2+;La3+能有效地促进六方相向单斜相的转变,当x=0.02时,转化率达到98.71%,提高了品质因数(Q×f值)和谐振频率温度系数(τf);烧结温度1400 ℃、x =0.01时Ba0.99La0.01Al2Si2O8陶瓷表现出最佳介电性能,Q×f为25674 GHz,密度ρ为3.30 g/cm3,介电常数εr为6.938,谐振频率温度系数τf 为−42.79×10–6/ ℃。

     

    Abstract: Ba1-xLaxAl2Si2O8(x=0, 0.005, 0.01, 0.015, 0.02) were synthesized by solid state reaction. Based on the first principle calculation, the replacement position was discussed. The formation energy of different sites was compared, and the result shows that it is most likely that La3+ replaced Ba2+. The crystal structure and microwave dielectric properties of Ba1-xLaxAl2Si2O8 were investigated. The result shows that La3+ can effectively promote the transformation from hexacelsian to celsian, when x=0.02, the conversion ratio reaches 98.71%, and the quality factor (Q×f) value and the temperature coefficient of resonant frequency (τf) are increased. when x=0.01, the Ba0.99La0.01Al2Si2O8 ceramics sintered at 1400 ℃ exhibits the best dielectric properties: Q×f = 25 674 GHz, ρ=3.30 g/cm3, εr =6.938, τf = −42.79×10–6/ ℃.

     

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