补偿掺杂i层对n-ZnO/i-ZnO/p-Si薄膜太阳能电池性能影响的模拟研究

The Simulation of the Effect of Compensating Doping i-ZnO Layer on the n-ZnO/i-ZnO/p-Si Solar Cell

摘要: 提出一种新型n-ZnO/i-ZnO/p-Si太阳能电池结构, 使用AMPS软件对该结构太阳能电池进行了模拟研究, 探索H, N杂质补偿掺杂形成本征i层对该结构太阳能电池的影响。研究发现在掺杂浓度为H=1.7×10¹⁷, N=2.8×10¹⁷时太阳能电池的转换效率可达15%, 并对其转换机理进行了研究。

Abstract: In this paper, a new type structure of n-ZnO/i-ZnO/p-Si solar cell is proposed. The performance of the solar cell is simulated by using of AMPS (Analysis of Microelectronic and Photonic Structures). The effect of the compensating doping i-ZnO layer on the performance of solar cell is explored. It is found in the simulation that a conversion coefficient of 15% is obtained when p-type doping of Nitrogen is 2. 8 × 10¹⁷ and n-type doping of Hydrogen is 1. 7 × 10¹⁷ in i-ZnO layer. The mechanism of the energy conversion is studied as well.