Abstract:
BaTi
1-xAl
xO
3 (
x=0.02, 0.04, 0.06, 0.08) were prepared by sol-gel methods. The crystal structure, microstructure and dielectric properties were investigated by X-ray diffraction method, scanning electron microscope and Agilent4284A testing analyzer respectively. The results reveal that BaTiO
3 is the main phase of the samples and the second phase BaAl
2O
4 is observed after Al
3+ doping. With increasing Al
3+ content, the average grain size decreased gradually; the density of samples increased from 5.46 g/cm
3 to 5.81 g/cm
3, but tended to stable as
x≥0.06. What's more, dielectric constant decreased from 4766 to1834, temperature coefficient increased from 0.00132/℃ to 0.0018/℃ and the dielectric peaks broadened at 1MHz. Meanwhile, the stability of defect cluster 2Al
Ti′ +V
O·· was -1.915 eV calculated by General Utility Lattice Program (GULP).