The Simulation of the Effect of Compensating Doping i-ZnO Layer on the n-ZnO/i-ZnO/p-Si Solar Cell

In this paper, a new type structure of n-ZnO/i-ZnO/p-Si solar cell is proposed. The performance of the solar cell is simulated by using of AMPS (Analysis of Microelectronic and Photonic Structures). The effect of the compensating doping i-ZnO layer on the performance of solar cell is explored. It is found in the simulation that a conversion coefficient of 15% is obtained when p-type doping of Nitrogen is 2. 8 × 10¹⁷ and n-type doping of Hydrogen is 1. 7 × 10¹⁷ in i-ZnO layer. The mechanism of the energy conversion is studied as well.